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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD5011
DESCR...
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD5011
DESCRIPTION ·High Breakdown
Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode
APPLICATIONS ·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current- Continuous
3.5
A
ICM
Collector Current-Peak
10
A
PC
Collector Power Dissipation @ TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD5011
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation
Voltage
IC= 2.5A; IB= 0.8A
8.0
V
VBE(sat)
Base-Emitter Saturation
Voltage
IC= 2.5A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
40
130
mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
8
VECF
C-E Diode Forward
Voltage
IF= 3.5A
2.0
V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V IC= 3A, IB1= 0.8A; IB2= -1.6A RL= 66.7Ω;VCC= 200V
3
MHz
tf
Fall Time
0.4
μs
isc Website:www.is...