D468

www.DataSheet4U.com 2SD468 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB562 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD468 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 1.0 1.5 0.9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — 1 Typ — — — — — 0.2 0.79 190 22 Max — — — 1.0 240 0.5 1.0 — — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 2 V, IC = 0.5 A*2 I C = 0.8 A, IB = 0.08 A*2 VCE = 2 V, IC = 0.5 A*2 VCE = 2 V, IC = 0.5 A*2 VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE* 85 — — — — VCE(sat) VBE fT Cob V V MHz pF Notes: 1. The 2SD468 is grouped by h FE as follows. 2. Pulse test B 85 to170 C 120 to 240 2 www.DataSheet4U.com Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (mA...