D30N40

AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 500V@150℃ 2.6A < 3.1Ω Top View TO252 DPAK Bottom View D D S G G S D G S AOD3N40 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM (<80µs) IDM (<20µs) IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 400 ±30 2.6 1.6 5.6 6.5 1.5 34 68 5 50 0.4 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 46 2.1 Maximum 55 0.5 2.5 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.2.0: May 2013 Page 1 of 6 AOD3N40 Electric...