2SD2462
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2462
Power Amplifier Applications
Unit: mm High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) Complementary to 2SB1602
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Colle...
