DATA SHEET
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEE...
DATA SHEET
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER
AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2403 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers.
FEATURES High current capacitance Low collector saturation
voltage Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Collector current (pulse)
Base current (DC) Base current (pulse)
Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
IB(DC) IB(pulse)
PT Tj Tstg
Conditions
PW ≤ 10 ms duty cycle ≤ 50 % PW ≤ 10 ms duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic board mounted
Ratings 80 60 6.0 3.0 5.0
0.2 0.4
2.0 150 −55 to +150
Unit V V V A A
A A
W °C °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16156EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan
©
21090928
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base
voltage ...