D2162

DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. ORDERING INFORMATION Ordering Name 2SD2162 Package Isolated TO-220 (Isolated TO-220) FEATURES High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A) Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 10 ms, duty cycle ≤ 50% Conditions Ratings 150 100 7.0 +8.0, −5.0 +12, −8.0 0.8 25 2.0 150 −55 to +150 Unit V V V A A A W W °C °C INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check wi...