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D209L

Inchange Semiconductor
Part Number D209L
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jul 13, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CE...
Datasheet PDF File D209L PDF File

D209L
D209L

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE ...


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