D2095

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2095 DESCRIPTION ¡¤ With TO-3P(H)IS package ¡¤ Built-in damper diode ¡¤ High voltage ,high speed ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ¡¤ ABSOLUTE MAXIMUM RATINGS AT Tc=25¡æ SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature www.DataSheet.co.kr CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 50 150 -55~150 UNIT V V A A W ¡æ ¡æ i Datasheet pdf - http://www.DataSheet4U.net/ Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=3.5A; IB=0.8A IC=3.5A; IB=0.8A VCB=500V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=5A ICP=3.5A ;IB1(end)=0.8A www.DataSheet.co.kr 2SD2095 SYMBOL VEBO VCEsat VBEsat ICBO hFE fT COB VF tf MIN 5 TYP. MAX UNIT V 3.0 5.0 1.5 10 ¦Ì V V A 8 3 105 1.6 0.5 2.0 1.0 ¦Ì MHz pF V s 2 Da...