D1760

Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 0.9 1.5 2.5 9.5±0.5 +0.3 −0.1 0.9 5.5 1.0 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 0.55±0.1 1.0±0.2 (1) Base (2) Collector (3) Emitter 0.65Max. 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 14.5±0.5 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC Collector power 2SD1760 dissipation 2SD1864 PC 3 A (DC) 4.5 A (Pulse) ∗1 15 W (Tc=25°C)∗2 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50μA Collector cutoff current ICBO − − 1 μA VCB=40V Emitter cutoff current IEBO − − 1 μA ...