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D1616 Datasheet

Part Number D1616
Manufacturers ETC
Logo ETC
Description 2SD1616
Datasheet D1616 DatasheetD1616 Datasheet (PDF)

www.DataSheet4U.com UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER Storage Temperature Junction Temperature Total Power Dissipation (Ta=25°C) Collector to Base Voltage: D1616 D1616A Collector to Emitter Voltage: D1616 D1616A Emitter to Base Voltage Collector Current (DC) Collector Current (*Pulse) Note: (*) Pulse .

  D1616   D1616






Part Number D1619
Manufacturers Sanyo
Logo Sanyo
Description 2SD1619
Datasheet D1616 DatasheetD1619 Datasheet (PDF)

Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation .

  D1616   D1616







Part Number D1618
Manufacturers Sanyo
Logo Sanyo
Description 2SD1618
Datasheet D1616 DatasheetD1618 Datasheet (PDF)

Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collecto.

  D1616   D1616







Part Number D1615A
Manufacturers NEC
Logo NEC
Description 2SD1615A
Datasheet D1616 DatasheetD1615A Datasheet (PDF)

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 V Collector .

  D1616   D1616







Part Number D1615
Manufacturers NEC
Logo NEC
Description 2SD1615
Datasheet D1616 DatasheetD1615 Datasheet (PDF)

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 V Collector .

  D1616   D1616







2SD1616

www.DataSheet4U.com UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER Storage Temperature Junction Temperature Total Power Dissipation (Ta=25°C) Collector to Base Voltage: D1616 D1616A Collector to Emitter Voltage: D1616 D1616A Emitter to Base Voltage Collector Current (DC) Collector Current (*Pulse) Note: (*) Pulse width≤10ms, Duty cycle<50% VEBO Ic Ic VCEO SYMBOL Tstg Tj Pc VCBO VALUE -55 ~+150 150 750 60 120 50 60 6 1 2 UNIT °C °C mW V V V A A CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain: D1616 D1616A Current Gain Bandwidth Product Output Capacitance Turn On Time SYMBOL ICBO IEBO VCE(SAT) VBE(SAT) VBE(ON) hFE1 hFE2 fT Cob ton TEST CONDITIONS VCB=60V VEB= 6V IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=50mA VCE=2V, IC=100mA VCE=2V, IC=1A VCE=2V, IC=100mA VCB=10V, f=1MHz VCE=10V, IC=100mA MIN. TYP. MAX. 100 100 0.3 1.2 700 600 400 UNIT nA nA V V mV 600 135 135 81 100 0.15 0.9 640 160 19 0.07 MHz pF us UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-008,A www.DataSheet4U.com UTC 2SD1616/A CHARACTERISTIC Storage Time Fall Time NPN EPITAXIAL SILICON TRANSISTOR SYMBOL ts tf TEST CONDITIONS IB1=-IB2=10mA VBE(off)=-2~-3V MIN. TYP. .


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