CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
R
3DD1555
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
...
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
R
3DD1555
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500 V
5A
5 V(max)
1
s(max)
Package TO-3P(H)IS
APPLICATIONS
z
z Horizontal deflection
output for color TV.
z3DD1555 NPN
FEATURES
z 3DD1555 is high breakdown
voltage of NPN bipolar transistor.
The main process of manufacture:
high
voltage mesa type process,
,
triple diffused process etc.,
adoption of fully plastic packge.
RoHS
RoHS product.
ORDER MESSAGE
123 EQUIVALENT CIRCUIT
RBE=50 (Typ.)
Order codes
Marking Halogen Free Package
3DD1555-O-A-N-D D1555
NO
TO-3P(H)IS
MARKING
Packaging Foam
Device Weight 5.50 g(typ)
Trademark Part No.
Year month For example 8 2008 10 10
october
200911D
1/6
R
ABSOLUTE RATINGS (Tc=25 )
3DD1555
Parameter
—
Collector−Base
Voltage
—
Collector−Emitter
Voltage
—
Emitter−Base
Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
Max. Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
BVCBO
1500
V
BVCEO
600
V
BVEBO
6
V
IC
5
A
ICP
10
IB
3
A
PC
50
W
Tj
150
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Tc=25 )
Parameter
V(BR)CBO V(BR)EBO
ICBO IEBO
HFE
VCE(sat) VBE(sat)
-VF tf ts ft
Tests conditions IC=1mA,IE=0 IE=400mA,IC=0 VCB=1500V, IE=0 VEB=5V, IC=0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 4 A IC=4A, IB=0.8A IC=4A, IB=0.8A IF=5A IC=4A,2IB1=-IB2=1.6A fH=15.75kHz VCE=10V, IC=0.1A
Min
Max
1500
6
1
66
200
8
30
5
5
1.5
2
1
...
