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D1481 Datasheet

Part Number D1481
Manufacturers NEC
Logo NEC
Description 2SD1481
Datasheet D1481 DatasheetD1481 Datasheet (PDF)

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC to the devices such as OA and FA equipment and motor solenoid relay printer head drivers ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Sy.

  D1481   D1481






Part Number D1486
Manufacturers Panasonic
Logo Panasonic
Description 2SD1486
Datasheet D1481 DatasheetD1486 Datasheet (PDF)

www.DataSheet4U.com .

  D1481   D1481







Part Number D1485
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SD1485
Datasheet D1481 DatasheetD1485 Datasheet (PDF)

Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 100 100 5 8 5 60 3 150 –55 to +155 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±.

  D1481   D1481







Part Number D1481N
Manufacturers Infineon
Logo Infineon
Description Rectifier Diode
Datasheet D1481 DatasheetD1481N Datasheet (PDF)

Netz-Gleichrichterdiode Rectifier Diode Technische Information / technical information D1481N Key Parameters VRRM enndaten IFAVM IFSM VT0 rT RthJC Clamping Force Max. Diameter Contact Diameter Height 6800 V 1590 A (TC=100 °C) 32587000A0 A(TC=55°C) 0,75 V 0,42 mΩ 14 K/kW 15 … 36 kN 76 mm 50 mm 26 mm For type designation please refer to actual short form catalog http://www.ifbip.com/catalog Merkmale  Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich  Hohe DC Sperrstabilität .

  D1481   D1481







2SD1481

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC to the devices such as OA and FA equipment and motor solenoid relay printer head drivers ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC(DC) Collector current IC(pulse)* Base current Total power dissipation IB(DC) PT (Tc = 25°C) Total power dissipation PT (Ta = 25°C) Junction temperature Tj Storage temperature Tstg * PW ≤ 300 µs, duty cycle ≤ 10% Ratings 60 ±10 60 ±10 7.0 2.0 4.0 0.2 15 1.5 150 −55 to +150 Unit V V V A A A W W °C °C PACKAGE DRAWING (UNIT: mm) (OHFWURGH &RQQHFWLRQ  %DVH  &ROOHFWRU  (PLWWHU  )LQ FROOHFWRU The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16189EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 21090928 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Condit.


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