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D1412

Part Number	D1412
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Mar 12, 2018
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 DESCRIPTION ·Low Collector S...
Datasheet	D1412 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 7A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1A 2 W 30 150 ℃ Tstg ...

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