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D13007MD

JILIN SINO-MICROELECTRONICS

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 4...


JILIN SINO-MICROELECTRONICS

D13007MD

File Download Download D13007MD Datasheet


Description
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z APPLICATIONS z Energy-saving light z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier TO-262 z z z z z (RoHS) FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13007MD-O-C-N-B 3DD13007MD-O-B-N-C Halogen Free NO NO Marking D13007MD D13007MD Package TO-220C TO-262 Packaging Tube Bag :200912D 1/6 R 3DD13007MD ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol VCEO VEBO IC ICP IB IBP PC Tj Tstg Value 700 400 9 8 16 4 8 80 150 -55~+150 Unit V V V A A A A W ℃ ℃ — — — Collector- Emitter Voltage(VBE=0) VCES Collector- Emitter Voltage(IB=0) Emitter-Base Voltage Collector Current(DC) Collector Current(pulse) Base Current(DC) Base Current(pulse) Total Dissipation (TO-262/220C) Junction Temperature Storage Temperature :pulse5ms。 Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. ElECTRICAL CHARACTERISTIC V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Hfe(1) Hfe(2) VCE(sat)(1) VCE(sat)(2) VBE(sat) tf ts fT Parameter Tests conditions IC=10mA,IB=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=700V, IE=0 VCE=400V,IB=0 VEB=9V, IC=0 VCE =5V, VCE =5V, IC=5A, IC=8A, IC=5A, IC=1A IC=5A IB=1A IB=2A IB=1A IC=5A,IB1=-IB2=1A Value(min) - 100 50 10 50 ...




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