D13001S

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13001S Characteristic/features High breakdown voltage High current capability High switching speed High reliability Application Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit Description 3DD13001S is a silicon npn power transistor. The main process include high voltage planer process,triple difussion process and multi-surface passivation. Absolute maximum ratings (Tc=25 ) ITEM Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Junction temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj Tstg RATING 600 400 9 0.5 1 150 -55~+150 UNITS V V V A W 2005.02 1/6 Electrical charactristics (Tc=25 ) Item Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base Cutoff current Collector-emitter Cutoff current Emitter-base Cutoff current DC current gain Collector-emitter Saturation voltage Base-emitter Saturation voltage Fall time Storage time Transition frequency Symbol Testing term V(BR)CEO Ic=10mA,IB=0 V(BR)CBO Ic=1mA,IB=0 V(BR)EBO IE=1mA,Ic=0 ICBO VCB=580V, IE=0 ICEO VCE=390V,IB=0 IEBO VEB=7V, IC=0 hFE VCE=20V, IC=20mA VCE(sat)(1) IC=50mA, IB=5mA VCE(sat)(2) IC=100mA, IB=10mA VBE(sat) IC=50mA, IB=5mA VCC=24V IC=0.1A, tf IB1=-IB2=0.02A ts VCC=24V IC=0.1A, IB1=-IB2=0.02A fT VCE=10V, Ic...