Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type darlington
For power amplification Complem...
Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type darlington
For power amplification Complementary to 2SB0949 and 2SB0949A
High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw
16.7±0.3 0.7±0.1
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Unit: mm
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
7.5±0.2
■ Features
φ 3.1±0.1
4.2±0.2
Solder Dip (4.0)
14.0±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.0 150 −55 to +150 °C °C V A A W V Unit V
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
0.8±0.1
2.54±0.3 5.08±0.5
Collector-emitter
voltage 2SD1275 (Base open) 2SD1275A Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter
voltage (Base open) Base-emitter
voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1275 2SD1275A 2SD1275 2SD1275A IEBO hFE1 hFE2 * Collector-emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SD1275 2SD1275A VBE ICBO VCE = 4 V, IC = 2 A VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, I...