Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
s Feat...
Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High collector to base
voltage VCBO q High-speed switching q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base
voltage
2SD1274 2SD1274A 2SD1274B
VCBO
150 200 250
2SD1274 Collector to
2SD1274A emitter
voltage
2SD1274B
VCES
150 200 250
Collector to emitter
voltage
Emitter to base
voltage
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO VEBO IC
PC
80 6 5 40 2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit
V
V
V V A W ˚C ˚C
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25
5.08±0.5 123
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
2SD1274 2SD1274A 2SD1274B
Collector to emitter
voltage
Emitter to base
voltage
Forward current transfer ratio
Base to emitter
voltage
Collector to emitter saturation
voltage
Transition frequency
Fall time
Symbol
ICBO
VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf
Conditions VCB = 150V, IE = 0 VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 ...