Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
• Hi...
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation
voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
www.DataSheCeto4lUle.cctoorm-base
voltage 2SD1266 VCBO
60
V
(Emitter open)
2SD1266A
80
Collector-emitter
voltage 2SD1266 VCEO
60
V
(Base open)
2SD1266A
80
Emitter-base
voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power
TC = 25°C PC
35
W
dissipation
2.0
Junction temperature Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
14.0±0.5 Solder Dip
(4.0)
16.7±0.3 7.5±0.2 0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
φ 3.1±0.1
1.4±0.1 0.8±0.1
1.3±0.2 0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter
voltage 2SD1266 VCEO IC = 30 mA, IB = 0
60
V
(Base open)
2SD1266A
80
Base-emitter
voltage Collector-emitter cutoff current (E-B short)
VBE 2SD1266 ICES 2SD1266A
Collector-emitter cutoff current (Base open)
2SD1266 ICEO 2SD1266A
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Collector-emitter satur...
