SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1265 2SD1265A
DESCRIPTION www.data·sWhei...
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1265 2SD1265A
DESCRIPTION www.data·sWheietht4uT.cOom-220Fa package
·Low collector saturation
voltage
·Wide area of safe operation
APPLICATIONS ·For audio frequency power applications
PINNING PIN 1 2 3
DESCRIPTION Base Collector Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base
voltage
2SD1265 2SD1265A
Open emitter
VCEO
Collector-emitter
voltage
2SD1265 2SD1265A
Open base
VEBO IC ICM IB
Emitter-base
voltage Collector current (DC) Collector current-peak Base current
PC Collector power dissipation
Tj Junction temperature Tstg Storage temperature
Open collector
TC=25 Ta=25
VALUE 60 80 60 80 8 4 6 1 30 2 150
-55~150
UNIT V
V V A A A W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1265 2SD1265A
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining
voltage
2SD1265 2SD1265A
IC=0.2A , L=25mH
VCEsat Collector-emitter saturation
voltage IC=2A; IB=0.4A
VBE Base-emitter on
voltage
IC=1A ; VCE=3V
ICBO Collector cut-off current
VCB=20V; IE=0
IEBO Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=3V
hFE-2
DC current gain
IC=1A ; VCE=3V
MIN TYP. MAX UNIT
60 V
80 1.0 V 1.2 V 30 µA 1 mA
40 30 160
hFE-2 Classifications QPO
30-60 500-100 80-160
2
S...