D1265

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1265 2SD1265A DESCRIPTION www.data·sWheietht4uT.cOom-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SD1265 2SD1265A Open emitter VCEO Collector-emitter voltage 2SD1265 2SD1265A Open base VEBO IC ICM IB Emitter-base voltage Collector current (DC) Collector current-peak Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature Open collector TC=25 Ta=25 VALUE 60 80 60 80 8 4 6 1 30 2 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1265 2SD1265A CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2SD1265 2SD1265A IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A VBE Base-emitter on voltage IC=1A ; VCE=3V ICBO Collector cut-off current VCB=20V; IE=0 IEBO Emitter cut-off current VEB=8V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=3V hFE-2 DC current gain IC=1A ; VCE=3V MIN TYP. MAX UNIT 60 V 80 1.0 V 1.2 V 30 µA 1 mA 40 30 160 hFE-2 Classifications QPO 30-60 500-100 80-160 2 S...