D1262A

Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 s Features q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SD1262 base voltage 2SD1262A VCBO 60 80 Collector to 2SD1262 emitter voltage 2SD1262A VCEO 60 80 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC 7 12 8 45 1.3 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 4.4±0.5 2.0 10.0±0.3 10.5min. 2.0 1.5max. 0.8±0.1 2.54±0.3 5.08±0.5 123 8.5±0.2 6.0±0.3 1.1max. 0.5max. 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 +0 1.5–0.4 3.0–+00..24 4.4±0.5 14.7±0.5 0.8±0.1 2.54±0.3 5.08±0.5 R0.5 R0.5 1.1 max. 0 to 0.4 123 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff 2SD1262 current 2SD1262A Emitter cutoff current ICBO IEBO VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 30mA, IB = 0 Forward current transfer ratio Collector to emitter saturatio...