Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2 6.0±0.5...
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.0±0.3 1.5±0.1
s Features
q Wide area of safe operation (ASO) q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1251 base
voltage 2SD1251A
VCBO
60 80
Collector to 2SD1251 emitter
voltage 2SD1251A
VCEO
60 80
Emitter to base
voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO ICP IC IB
PC
8 6 4 1 30 1.3
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit
V
V
V A A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1251
voltage
2SD1251A
ICBO IEBO
VCEO(sus)*2
VCB = 20V, IE = 0 VEB = 8V, IC = 0
IC = 0.2A, L = 25mH
Forward current transfer ratio
Base to emitter
voltage Collector to emitter saturation
voltage Transition frequency
hFE1 hFE2*1 VBE VCE(sat) fT
VCE = 3V, IC = 0.1A VCE = 3V, IC = 1A VCE = 3V, IC = 1A IC = 2A, IB = 0.4A VCE = 10V, IC = 0.2A, f = 0.5MHz
4.4±0.5 2.0
10.0±0.3
10.5min. 2.0
1.5max.
0.8±0.1 2.54±0.3 5.08±0.5 123
8.5±0.2 6.0±0.3
1.1max.
0.5max.
1:Base 2:Collector 3:Emitter N Type Package
Unit: mm
3.4±0.3 1.0±0.1
+0
1.5–0.4 3.0–+00..24 4.4±0.5 14....
