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D1207 Datasheet

Part Number D1207
Manufacturers Sanyo Semiconductor
Logo Sanyo Semiconductor
Description 2SD1207
Datasheet D1207 DatasheetD1207 Datasheet (PDF)

Ordering number:930C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB892/2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. www.DataSheet4U.com Package Dimensions unit:mm 2006A [2SB892/2SD1207] Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB892 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 2.

  D1207   D1207






Part Number D1207
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D1207 DatasheetD1207 Datasheet (PDF)

TetraFET D1204UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss 5 4 H I F M K J N DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 .

  D1207   D1207







2SD1207

Ordering number:930C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB892/2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. www.DataSheet4U.com Package Dimensions unit:mm 2006A [2SB892/2SD1207] Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB892 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)2 (–)4 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz 10 0 40 150 12 (22) MHz pF pF Conditions Ratings min typ max (–)0.1 (–)0.1 56 0 Unit µA µA * : The 2SB892/2SD1207 are graded as follows by hFE at 100mA : 100 R 200 140 S 280 200 T 400 280 U 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that.


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