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D1084UK Datasheet

Part Number D1084UK
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D1084UK DatasheetD1084UK Datasheet (PDF)

TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) 3.83 Dia. 4.08 4 SEME D1084UK METAL GATE RF SILICON FET 9.65 10.66 4.82 5.33 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES 12.70 13.71 9.01 9.52 1 2 3 0.726 min. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS 0.73 0.88 0.31 0.45 2.41 2.92 13.71 m in. • LOW NOISE • HIGH GAIN – 13dB MINIMU.

  D1084UK   D1084UK






METAL GATE RF SILICON FET

TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) 3.83 Dia. 4.08 4 SEME D1084UK METAL GATE RF SILICON FET 9.65 10.66 4.82 5.33 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES 12.70 13.71 9.01 9.52 1 2 3 0.726 min. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS 0.73 0.88 0.31 0.45 2.41 2.92 13.71 m in. • LOW NOISE • HIGH GAIN – 13dB MINIMUM • SURFACE MOUNT 2.28 2.79 4.82 5.33 APPLICATIONS TO–220 PLASTIC PACKAGE PIN 1 – GATE PIN 3 – SOURCE PIN 2 – DRAIN PIN 4 – DRAIN • LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A –65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email [email protected] Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V VDS = 28V PO = 4W VDS = 0V ID = 10mA VGS = 0 VDS = 0 VDS .


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