DatasheetsPDF.com
D1084UK Datasheet
Part Number
D1084UK
Manufacturers
Seme LAB
Logo
Description
METAL GATE RF SILICON FET
Datasheet
D1084UK Datasheet (PDF)
TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) 3.83 Dia. 4.08 4 SEME D1084UK METAL GATE RF SILICON FET 9.65 10.66 4.82 5.33 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES 12.70 13.71 9.01 9.52 1 2 3 0.726 min. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS 0.73 0.88 0.31 0.45 2.41 2.92 13.71 m in. • LOW NOISE • HIGH GAIN – 13dB MINIMU.
METAL GATE RF SILICON FET
TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) 3.83 Dia. 4.08 4 SEME D1084UK METAL GATE RF SILICON FET 9.65 10.66 4.82 5.33 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES 12.70 13.71 9.01 9.52 1 2 3 0.726 min. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS 0.73 0.88 0.31 0.45 2.41 2.92 13.71 m in. • LOW NOISE • HIGH GAIN – 13dB MINIMUM • SURFACE MOUNT 2.28 2.79 4.82 5.33 APPLICATIONS TO–220 PLASTIC PACKAGE PIN 1 – GATE PIN 3 – SOURCE PIN 2 – DRAIN PIN 4 – DRAIN • LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A –65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email
[email protected]
Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V VDS = 28V PO = 4W VDS = 0V ID = 10mA VGS = 0 VDS = 0 VDS .
2005-03-27 :
PIC16C74A
PIC16C76
PIC16C765
PIC16C77
PIC16C770
PIC16C771
PIC16C773
PIC16C774
PIC16C83
PIC16C84
@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (
Privacy Policy & Contact
)