SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1025
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1025
www.datasheet4u.com
DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 200 7 8 12 0.5 1.0 50 150 -55~150 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL R8j-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0.8A ; VCE=10V 1500 MIN 200
www.datasheet4u.com
2SD1025
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT
TYP.
MAX
UNIT V
1.5 2.0 0.1 0.1 5.0 30000 20
V V mA mA mA
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1...