D1014UK

TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL PO AT 1GHz DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45° Tol. 0.010 0.005 5° 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005 LOW NOISE HIGH GAIN – 13 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 87.5W 70V ±20V 10A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 12/00 D1014UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Co...