TetraFET
D1006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B C A
E
1
2
3
F
G
6
J
5
4
GOLD METALLISED MULTI-P...
TetraFET
D1006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B C A
E
1
2
3
F
G
6
J
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
D H M
Q
N
K
O
P
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 14 dB MINIMUM
DV
PIN 1 PIN 3 PIN 5 DIM A B C D E F G H J K M N O P Q SOURCE SOURCE GATE mm 9.09 19.3 45° 5.71 1.65R 9.78 20.32 19.30 1.52R 10.77 22.86 3.17 0.13 4.19 6.35 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.02 0.13 REF PIN 2 PIN 4 PIN 6 Inches 0.358 0.760 45° 0.225 0.065R 0.385 0.800 0.760 0.060R 0.424 0.900 0.125 0.005 0.165 0.250 DRAIN SOURCE SOURCE Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.001 0.005 REF
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown
Voltage Gate – Source Breakdown
Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 220W 70V ±20V 30A –65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim. 11/00
D1006UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown
Voltage Zero Gate
Voltage Drain Cu...