CY7C1526V18

www.DataSheet4U.com PRELIMINARY CY7C1511V18 CY7C1526V18 CY7C1513V18 CY7C1515V18 72-Mbit QDR™-II SRAM 4-Word Burst Architecture Features Separate Independent Read and Write Data Ports — Supports concurrent transactions 250-MHz Clock for High Bandwidth 4-Word Burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only Two output clocks (C and C) accounts for clock skew and flight time mismatching Echo clocks (CQ and CQ) simplify data capture in high speed systems Single multiplexed address input bus latches address inputs for both Read and Write ports Separate Port Selects for depth expansion Synchronous internally self-timed writes Available in ×8,x9, ×18, and ×36 configurations Full data coherency providing most current data Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd) 15 × 17 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball (11 × 15 matrix) Variable drive HSTL output buffers JTAG 1149.1 Compatible test access port Delay Lock Loop (DLL) for accurate data placement Functional Description The CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port ha...