CY62157E

CY62157E MoBL® 8-Mbit (512 K × 16) Static RAM 8-Mbit (512 K × 16) Static RAM Features ■ Very high speed: 45 ns ❐ Industrial: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C Wide voltage range: 4.5 V–5.5 V Ultra low standby power ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A (Industrial) Ultra low active power ❐ Typical active current: 1.8 mA at f = 1 MHz Ultra low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package ■ ■ applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deseleMoBL®cted (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when: ■ ■ ■ ■ Deselected (CE1HIGH or CE2 LOW) Outputs are disabled (OE HIGH) Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) Write operation is active (CE1 LOW, CE2 HIGH and WE LOW) ■ ■ ■ ■ ■ ■ To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 thro...