fax id: 30231CY27H010
CY27H010
128K x 8 High-Speed CMOS EPROM
Features
• CMOS for optimum speed/power • High speed
— ...
fax id: 30231CY27H010
CY27H010
128K x 8 High-Speed
CMOS EPROM
Features
CMOS for optimum speed/power High speed
— tAA = 25 ns max. (commercial) — tAA = 35 ns max. (military) Low power — 275 mW max.
— Less than 85 mW when deselected Byte-wide memory organization 100% reprogrammable in thewindowed package EPROM technology Capable of withstanding >2001V static discharge Available in
— 32-pin PLCC
— 32-pin TSOP-I
— 32-pin, 600-mil plastic or hermetic DIP
— 32-pin hermetic LCC
Functional Description
The CY27H010 is a high-performance, 1-megabit
CMOS EPROM organized in 128 Kbytes. It is available in indus-
Logic Block Diagram
A0 A1 A2 A3 A4 A5
A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16
ADDRESS DECODER
PROGRAMMABLE ARRAY MULTIPLEXER
POWER DOWN
CE OUTPUT ENABLE
OE DECODER
try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H010 is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.
The CY27H010 is equipped with a power-down chip enable (CE) input and output enable (OE). When CE is deasserted, the device powers down to a low-power stand-by mode. The OE pin three-states the outputs without putting the device into stand-by mode. While CE offers lower power, OE provides a more rapid transition to and from three-stated outputs.
The memory cells utilize proven EPROM floating-gate technology an...