8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108L CY14B108N
8-Mbit (1024 K × 8/512 K × 16) nvSRAM
8-Mbit (1024 K × 8/512 K × 16) nvSRAM
Features
■ 20 ns, 25 ns...
Description
CY14B108L CY14B108N
8-Mbit (1024 K × 8/512 K × 16) nvSRAM
8-Mbit (1024 K × 8/512 K × 16) nvSRAM
Features
■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16
(CY14B108N) ■ Hands off automatic STORE on power-down with only a small
capacitor ■ STORE to QuantumTrap nonvolatile elements initiated by
software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite Read, Write, and RECALL cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial temperature
■ Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA)
■ Pb-free and restriction of hazardous substances (RoHS) compliant
Functional Description
The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes...
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