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CXG1178K
Power Amplifier Module for JCDMA
Description The CXG1178K is the power amp...
( DataSheet : www.DataSheet4U.com )
CXG1178K
Power Amplifier Module for JCDMA
Description The CXG1178K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process. Features Single power supply operation: VDD1 = VDD2 = 3.5V (High mode), 1.5V (Mid mode), 1.0V (Low mode), VGG = 2.8V Ultrasmall package: 0.027cc (4.5mm × 4.5mm × 1.35mm) High efficiency: ηadd = 40.5%@POUT = 27.5dBm (High mode), ηadd = 17.6%@POUT = 14dBm (Mid mode) Output power (High/Mid/Low mode switching supported): POUT = 18 to 27.5dBm: High mode, POUT = 14 to 18dBm: Mid mode, POUT ≤ 14dBm: Low mode Gain (High mode): Gp = 28.5dB (@900MHz) Applications Power amplifier for JCDMA system cellular phones Structure p-Gate HFET module Absolute Maximum Ratings Operating case temperature Storage temperature Bias
voltage Bias
voltage Input power (Ta = 25°C) Tcase –30 to +110 °C Tstg –30 to +125 °C VDD1, VDD2 6 V VGG 3.3 V (@VDD1 = VDD2 ≤ 3.5V) PIN 8 dBm 8 pin LCC (Ceramic)
Recommended Bias
Voltage Conditions VDD1 = VDD2 = 1.0 to 4.2V VGG = 2.8V ± 1%
Descriptions in this specification are specified for the Sony's recommended evaluation board . GaAs module is ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Applica...