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CXG1156K
Power Amplifier Module for JCDMA
Description The CXG1156K is the power amp...
( DataSheet : www.DataSheet4U.com )
CXG1156K
Power Amplifier Module for JCDMA
Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process. Features Single power supply operation: VDD1 = VDD2 = 3.5V (High power mode), 1.3V (Low power mode 1), 1.0V (Low power mode 2), VGG = 2.7V Small package: 0.065cc (6.2mm × 6.2mm × 1.7mm) High efficiency: ηadd = 40%@POUT = 27.5dBm (High power mode), ηadd = 23%@POUT = 15dBm (Low power mode 1) Output power (high/low power mode switching supported): POUT = 18 to 27.5dBm: High power mode, POUT = 15 to 18dBm: Low power mode 1, POUT ≤ 15dBm: Low power mode 2 Gain: Gp = 29dB (@900MHz) Applications Power amplifier for JCDMA system cellular phones Structure p-Gate HFET module Absolute Maximum Ratings (Ta = 25°C) Operating case temperature Tcase –30 to +90 °C Storage temperature Tstg –30 to +125 °C Bias
voltage VDD1, VDD2 6 V Bias
voltage VGG 3.3 V (@VDD1 = VDD2 = 3.5V) Input power PIN 8 dBm Recommended Operating Conditions* VDD1 = VDD2 = 3.2 to 4.2V@POUT = 18 to 27.5dBm, 1.3 to 2.0V@POUT ≤ 18dBm, 1.0 to 2.0V@POUT ≤ 15dBm VGG = 2.7V ± 1% 10 pin LCC (Ceramic)
*This recommended operating
voltage is the value that specified the supply
voltage range where the functional operation was confirmed by the Sony’s recommended evaluation board. GaAs module is ESD sensitive devices. Special handling precautions are required.
Sony reserves...