Silicon N-Channel Power MOSFET
CSF501D
○R
Features：
l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rat...
Silicon N-Channel Power
MOSFET
CSF501D
○R
Features：
l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating;ROHS compliant l Halogen Free
VDSX IDSS,min RDS(ON),max
600 0.012 700
V A Ω
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSX
ID
ID
a1
M
VGS dv/dt a2
PD
VESD(G-S)
TJ，Tstg
TL
Drain-to-Source
Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source
Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Operating Junction and Storage Temperature Range MaximumTemperature for Soldering
Rating
600 0.030 0.024 0.120 ±20
5.0 0.5
300
150，–55 to 150 300
Units
V A A A V V/ns W
V
℃ ℃
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSX
ID(off)
IGSS(F) IGSS(R)
Drain to Source Breakdown
Voltage VGS=-5V, ID=250µA
Off-state Drain to...
