IRFS830(CS830F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switchin...
IRFS830(CS830F)
N-Channel
MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
: ,,。
Features: Low gate charge, low crss, fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 500 V
ID(Tc=25℃)
5.0 A
ID(Tc=100℃)
3.0 A
IDM 20 A
VGSS
±30
V
IAR 4.5 A
EAS 292 mJ
EAR
8.75
mJ
PD(Tc=25℃)
38 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=500V VDS=400V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=2.5A
gFS
VDS=40V
ID=2.5A
VSD
VGS=0V
IS=5.0A
Ciss
Coss VDS=25V VGS=0V f=1.0MHz
Crss
td(on)
tr td(off)
VDD=250V ID=4.5A RG=25Ω
tf
...
