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CS830A3RD Datasheet

Part Number CS830A3RD
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS830A3RD DatasheetCS830A3RD Datasheet (PDF)

Silicon N-Channel Power MOSFET CS830 A3RD ○R General Description: CS830 A3RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features: l Fast Switching l ESD Improved Cap.

  CS830A3RD   CS830A3RD






Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS830 A3RD ○R General Description: CS830 A3RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features: l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Puls.


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