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CS223-4N Datasheet

Part Number CS223-4N
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description (CS223-4M/N) SILICON CONTROLLED RECTIFIER
Datasheet CS223-4N DatasheetCS223-4N Datasheet (PDF)

w w at .D w h S a t e e 4.0 AMP SCR 600 THRU 800 VOLTS 4U CS223-4M CS223-4N .c om Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) I2t V.

  CS223-4N   CS223-4N






Part Number CS223-4M
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description (CS223-4M/N) SILICON CONTROLLED RECTIFIER
Datasheet CS223-4N DatasheetCS223-4M Datasheet (PDF)

w w at .D w h S a t e e 4.0 AMP SCR 600 THRU 800 VOLTS 4U CS223-4M CS223-4N .c om Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) I2t V.

  CS223-4N   CS223-4N







(CS223-4M/N) SILICON CONTROLLED RECTIFIER

w w at .D w h S a t e e 4.0 AMP SCR 600 THRU 800 VOLTS 4U CS223-4M CS223-4N .c om Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=20µs) Average Gate Power Dissipation Peak Gate Current (tp=20µs) Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature Thermal Resistance VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IGM di/dt Tstg TJ CS223 -4M 600 4.0 30 CS223 -4N 800 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VRRM, RGK=1KΩ, TC=125°C VD=12V, RL=10Ω IT=50mA, RGK=1KΩ VD=12V, RL=10Ω ITM=8.0A, tp=380µs w w VD=2 /3 VDRM, RGK=1KΩ, TC=125°C .D w t a S a ΘJA e h t e U 4 4.5 3.0 0.2 1.2 50 62.5 TYP 38 0.25 0.55 1.6 .c m o V A A W W A °C °C UNITS A2s A/µs -40 to +150 -40 to +125 °C/W MAX 10 200 UNITS µA µA µA mA V V V/µs 20 200 2.0 0.8 1.8 10 R0 (11-May 2004) w w w .D a S a t e e h U 4 t m o .c Central TM Semiconductor Corp. CS223-4M CS223-4N 4.0 AMP SCR 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL.


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