CS220-8B CS220-8D CS220-8M CS220-8N
SILICON CONTROLLED RECTIFIERS 8.0 AMP, 200 THRU 800 VOLT
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CS220-8B CS220-8D CS220-8M CS220-8N
SILICON CONTROLLED RECTIFIERS 8.0 AMP, 200 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CS220-8B series types are epoxy molded SCRs designed for sensing circuit and control system applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Peak Repetitive Off-State
Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge Current, t=10ms
ITSM
I2t Value for Fusing, t=10ms
I2t
Peak Gate Power Dissipation, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate
Voltage, tp=10μs Peak Reverse Gate
Voltage, tp=10μs Critical Rate of Rise of On-State Current
PGM PG(AV) IFGM VFGM VRGM
di/dt
Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance
TJ Tstg ΘJA ΘJC
-8B 200
CS220 -8D -8M 400 600
8.0 60 18 40 1.0 4.0 16 5.0 50 -40 to +125 -40 to +150 60 2.5
-8N 800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IDRM, IRRM Rated VDRM, VRRM
IDRM, IRRM Rated VDRM, VRRM, TC=125°C
IGT VD=12V, RL=10Ω
3.0
IH IT=100mA
7.3
VGT
VD=12V, RL=10Ω
0.9
VTM
ITM=16A, tp=380μs
1.3
dv/dt
VD=⅔Rated VDRM, TC=125°C
200
MAX 10 2.0 15 20 1.5 1.8
UNITS V A A A2s W W A V V
A/μs °C °C °C/W °C/W
UNITS μA mA mA mA V V V/μs
R4 (24-October 2013)
CS220-8B CS220-8D CS220-8M CS220-8N
SILICON CONTROLLED RECTIFIERS 8.0 AMP, 20...
