Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip
PROCESS
CPS130
Silicon Controlled Rectifier
16 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thick...
Description
PROCESS
CPS130
Silicon Controlled Rectifier
16 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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Glass Passivated Mesa 130 x 130 MILS 8.7 MILS 99 x 49 MILS 42 x 42 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER 624 PRINCIPAL DEVICE TYPES CS220-16M Series CSDD-16M Series
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (4- January 2006)
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