PROCESS
CPS110
Silicon Controlled Rectifier
12 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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Glass Passivated Mesa 110 x 110 MILS 8.7 MILS 80 x 40 MILS 31 x 31 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROS...
