CPQ150

Central www.DataSheet4U.com TM PROCESS CPQ150 Triac Semiconductor Corp. 16 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 150 MILS x 150 MILS 8.6 MILS ± 0.6 MILS 68.9 MILS x 118 MILS 39.4 MILS x 39.4 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 466 PRINCIPAL DEVICE TYPES CQ220-16B Series BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13-February 2003) ...