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CPH6320 Datasheet

Part Number CPH6320
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description General-Purpose Switching Device Applications
Datasheet CPH6320 DatasheetCPH6320 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8208 CPH6320 P-Channel Silicon MOSFET CPH6320 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on .

  CPH6320   CPH6320






Part Number CPH6328
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Datasheet CPH6320 DatasheetCPH6328 Datasheet (PDF)

www.DataSheet4U.com 5Ordering number : ENN7530 CPH6328 P-Channel Silicon MOSFET CPH6328 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6328] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage.

  CPH6320   CPH6320







Part Number CPH6324
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Datasheet CPH6320 DatasheetCPH6324 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN0000 CPH6324 P-Channel Silicon MOSFET CPH6324 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6324] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperat.

  CPH6320   CPH6320







General-Purpose Switching Device Applications

www.DataSheet4U.com Ordering number : ENN8208 CPH6320 P-Channel Silicon MOSFET CPH6320 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings --12 ±8 --3.5 --14 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-12V, VGS=0 VGS=±6.4V, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=--1.7A ID=--1.7A, VGS=-4.5V ID=--0.8A, VGS=-2.5V ID=--0.4A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --12 --10 ±10 --0.3 3.3 4.7 75 110 150 450 100 85 15 90 62 50 98 155 225 --1.0 typ max Unit V µ.


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