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CPH3114 Datasheet

Part Number CPH3114
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Transistor
Datasheet CPH3114 DatasheetCPH3114 Datasheet (PDF)

Ordering number:ENN6394 PNP/NPN Epitaxial Planar Silicon Transistors CPH3114/CPH3214 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers. Package Dimensions unit:mm 2150A [CPH3114/CPH3214] 0.4 3 0.6 0.2 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). · High allowable power diss.

  CPH3114   CPH3114






Part Number CPH3114
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet CPH3114 DatasheetCPH3114 Datasheet (PDF)

Ordering number : EN6394D CPH3114 Bipolar Transistor –15V, –1.5A, Low VCE(sat), PNP Single CPH3 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Paramet.

  CPH3114   CPH3114







PNP Transistor

Ordering number:ENN6394 PNP/NPN Epitaxial Planar Silicon Transistors CPH3114/CPH3214 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers. Package Dimensions unit:mm 2150A [CPH3114/CPH3214] 0.4 3 0.6 0.2 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). · High allowable power dissipation. 2.9 0.15 0.05 1.6 2.8 1 1.9 2 0.2 0.6 Specifications ( ) : CPH3114 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2×0.8mm) 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Conditions 0.7 0.9 Ratings (–)15 (–)15 (–)5 (–)1.5 (–)3 (–)300 0.9 150 –55 to +150 Unit V V V A A mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)300mA VCB=(–)10V, f=1MHz 200 (350) 450 (17)9 Conditions Ratings min typ max (–)0.1 (–)0.1 560 MHz MHz pF Unit µA µA Marking : CPH3114 : AP, CPH3214 : CP Continued .


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