CPD93V

PROCESS CPD93V Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 12.8 x 12.8 MILS 7.1 MILS 5.1 x 5.1 MILS Al - 30,000Å Au-As - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 63,904 PRINCIPAL DEVICE TYPES CMPD4150 BAS56 R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD93V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com ...