CPD85V

PROCESS Schottky Rectifier CPD85V 1 Amp Schottky Barrier Rectifier Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 39.4 x 39.4 MILS 7.1 MILS 35 x 35 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 10,900 PRINCIPAL DEVICE TYPES CMPSH1-4L R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD85V Typical Electrical Characteristics R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com ...