PROCESS
General Purpose Rectifier
1 Amp Glass Passivated Rectifier Chip
CPD69
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 42.5 x 42.5 MILS 12.5 MILS 32 x 32 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
6,200
PRINCIPAL DEVI...
