CPD31X

Product Brief CPD31X CPD34X 10A, 60V Schottky Rectifier Die Die Size Die Thickness Die Passivation Anode Bonding Pad Area Top Side Metalization (CPD31X) Top Side Metalization (CPD34X) Back Side Metalization Scribe Alley Width Wafer Diameter Gross Die Per Wafer 85 MILS x 85 MILS 5.9 MILS ±0.8 MILS SiN 78 MILS x 78 MILS Al/Ni/Au - 30,000Å/4,000Å/1,500Å Al - 30,000Å Ti/Ni/Au - 1,600Å/5,550Å/1,500Å 3.15 MILS 5 INCHES 2,260 CPD31X CPD34X Features: Low forward voltage at 10 Amps forward current Low reverse leakage current Low profile geometry Metalization suitable for standard die attached technologies Top metalization optimized for solder process (CPD31X) Top metalization optimized for wire bonding (CPD34X) Typical Electrical Characteristics Applications: Optimized for use as a by-pass rectifier in low profile solar (PV) panels Reverse polarity protection OR-ing diode Benefits: Energy efficiency High temperature characterization Space savings Literature Samples To order samples contact: Central’s Sales department 631-435-1110 To order the latest Chip databook, visit: web.centralsemi.com/search/sample.php Maximum Ratings (TA = 25˚C) IO IFSM (A) MAX 10 (A) MAX 250 Electrical Characteristics (TA = 25˚C unless otherwise noted) VF @ IF IR (V) TYP 0.49 0.59 (V) MAX – 0.67 (A) TYP 5.0 10 75μA – MAX 500μA *50mA VRRM (V) MAX 60 VR TJ, Tstg (˚C) MAX -65 to +150 BVR (V) MIN 60 @ VR (V) MAX 60 *60 (V) MAX 60 *TA=100˚C 145 Adams Avenue Hauppauge Ne...