CPD30V

PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size Die Thickness Anode 1 Bonding Pad Area Anode 2 Bonding Pad Area Top Side Metalization Back Side Metalization 15.4 x 15.4 MILS 7.1 MILS 5.9 x 5.9 x 8.3 MILS 5.9 x 5.9 x 8.3 MILS Al - 30,000Å Au-As - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 46,200 PRINCIPAL DEVICE TYPE CMLD2838 BACKSIDE COMMON CATHODE R0 R2 (6-October 2011) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD30V Typical Electrical Characteristics R2 (6-October 2011) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com ...