CP712

www.DataSheet4U.com PROCESS Power Transistor CP712 Central TM PNP - Amp/Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,960 PRINCIPAL DEVICE TYPES CZT7120 EPITAXIAL PLANAR 75 x 75 MILS 9.0 MILS 17 x 12 MILS 31 x 12 MILS Al - 30,000Å Ti/Ni/Ag - 11,300Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) www.DataSheet4U.com Central TM PROCESS CP712 Semiconductor Corp. Typical Electrical Characteristics The Typical Electrical Characteristics data for this chip is currently being revised. For the latest updated data for this Chip Process, please visit our website at: www.centralsemi.com/chip 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) ...