CP591

PROCESS Small Signal Transistor PNP - Amp/Switch Transistor Chip www.DataSheet4U.com CP591 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR EPITAXIAL PLANAR 19 x 19 MILS 9.0 MILS 3.5 x 4.3 MILS 3.5 x 4.5 MILS Al - 30,000Å Au - 18,000Å 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002) Central www.DataSheet4U.com TM PROCESS CP591 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002) ...