PROCESS
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
CP379X
PROCESS DETAILS Die Size Die...
PROCESS
Small Signal
MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
CP379X
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 31.5 x 31.5 MILS 5.5 MILS 3.9 x 3.9 MILS 19.3 x 21.3 MILS Al-Si - 35,000Å Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 24,000 PRINCIPAL DEVICE TYPE CMPDM7002AHC
R0 (20-September 2010)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
PROCESS
CP379X
Typical Electrical Characteristics
R0 (20-September 2010)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
...
